Mr. James Opondo Abuogo

Designation: Tutorial Fellow
Department: Electrical and Electronic Engineering

Academic Qualifications

Qualification	Institution	Year
Msc. Electric Power System and Automation	North China Electric Power University	2019
Bsc. Electrical and Electronic Engineering	Dedan Kimathi University of Technology	2014

Areas of Expertise

• Power System Analysis and Design
• Power Electronic Devices Characterization and Packaging
• Electrical Machines and Machine Drives

Work Experience

• 2019 – Up to Date:  Tutorial Fellow, Dedan Kimathi University of Technology, Electrical and Electronics Engineering Department
• 2015 – 2019: Teaching Assistant, Dedan Kimathi University of Technology, Electrical and Electronics Engineering

Publications

1. Journal Publication
• Abuogo, J.O. and Zhao, Z., “Machine learning approach for sorting SiC MOSFET devices for paralleling,” Journal of Power Electronics, Springer, (2020) 20: 329. https://doi.org/10.1007/s43236-019-00028-z
2. Conferences
• J. Abuogo, Z. Zhao and J. Ke, “Analysis of Oscillation Mechanism during Turn-on of SiC MOSFET,” 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC), Shenzhen, 2018, pp. 1-6. doi: 10.1109/PEAC.2018.8590453 https://ieeexplore.ieee.org/document/8590453
• James Abuogo, Zhibin Zao and Junji Ke, “Linear regression model for screening SiC MOSFETs for paralleling to minimize transient current imbalance”,The 5th International Conference on Electrical Engineering, Control and Robotics (EECR 2019), Guangzhou, China.
  https://iopscience.iop.org/article/10.1088/1757-899X/533/1/012011
• J. Abuogo, Z. Zhao and J. Ke, “Maximum Peak Shifting Phenomenon of Turn-off Voltage Ringing for SiC MOSFET”, IEEE AFRICON 2019, Accra, Ghana, Sept. 2019, (presented)

Co-authored

1. Journal Publications
• J. Ke, Z. Zhao, P. Sun, H. Huang, J. Abuogo and X. Cui, “Chips Classification for Suppressing Transient Current Imbalance of Parallel-Connected Silicon Carbide MOSFETs,” in IEEE Transactions on Power Electronics. doi: 10.1109/TPEL.2019.2934739
  https://ieeexplore.ieee.org/document/8794748
• J. Ke, Z. Zhao, P. Sun, H. Huang, J. Abuogo, and X. Cui, “Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs”, Journal of Power Electronics (JPE) – Korean Institute of Power Electronics (KIPE), JPE, vol.19, no.4, pp.1054-1067 , 2019
  http://manuscript.jpels.org/LTKPSWeb/pub/publink.aspx?ppseq=1795
2. Conferences
• J. Ke, H. Huang, P. Sun, J. Abuogo, Z. Zhao and X. Cui, “Influence of Parasitic Capacitances on Transient Current Distribution of Paralleled SiC MOSFETs,” 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi’an, China, 2018, pp. 88-93. doi: 10.1109/WiPDAAsia.2018.8734667
  https://ieeexplore.ieee.org/document/8734667
• J. Ke, Z. Zhao, P. Sun, H. Huang, J. Abuogo and X. Cui, “New Screening Method for Improving Transient Current sharing of Paralleled SiC MOSFETs,” 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia), Niigata, 2018, pp. 1125-1130. doi: 10.23919/IPEC.2018.8507893
  http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8507893&isnumber

Awards, Scholarships and Recognitions

• Chinese Government Scholarship (CSC award)
• Best Student Award in Electrical and Electronic Engineering at DeKUT

Research

• Ongoing/Completed Researches
  Completed Research: Silicon Carbide MOSFET switching characteristics and application challenges
  Conducted at: State Key Laboratory of Alternate Power Systems with Renewable Energy Sources (North China Electric Power University)
• Research funding: (Indicate the Source, Amount & Year)
  Funded by: National R&D Program of China
  Year: 2016 to 2019
• Ongoing/Completed Researches
  Completed Research: Raspberry PI application in engineering education.
  Conducted at: Dedan Kimathi University of Technology (Electrical and Electronic Engineering Department)
• Research funding: (Indicate the Source, Amount & Year)
  Funded by: Kenya Education Network (KENET)
  Year: 2015 to 2016
  Amount: 10,000 USD

Research Interests

• Wide band-gap power electronic devices (Silicon Carbide and Gallium Nitride MOSFETs and IGBTs) performance analysis, switching characterization, packaging, paralleling and reliability studies.
• Power systems analysis and design.
• Electrical machines and drives.

Affiliation/Membership to Professional Bodies

• Engineers Boards of Kenya – Graduate Engineer

Any other talent that could contribute to the University agenda (Examples: Re-known Mentor, Sports person, Master of Ceremony e.t.c)

• Trained Peer Educator